F. Degave: search on Z-Library

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1

Initial stages of GaN buffer layer growth on (0001) sapphire by metalorganic chemical vapour deposition

Degave, F., Ruterana, P., Nouet, G., Je, J.H., Kim, C.C.

Journal:

Diamond and Related Materials

Year:

2002

Language:

english

File:

PDF, 1.05 MB

english, 2002

2

Analysis of the nucleation of GaN layers on (0001) sapphire

F. Degave, P. Ruterana, G. Nouet, J.H. Je, C.C. Kim

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 439 KB

english, 2002

3

Metalorganic Chemical Vapor Deposition Growth of a GaN Epilayer on an Annealed GaN Buffer Layer

F. Degave, P. Ruterana, G. Nouet, J.H. Je, C.C. Kim

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 158 KB

english, 2003

4

Microstructure of GaN epitaxial films grown on (0001) sapphire by chemical beam epitaxy as related to buffer growth conditions

F. Degave, P. Ruterana, F. Degave, G. Nouet

Year:

2000

Language:

english

File:

PDF, 431 KB

english, 2000

5

Defects and nucleation of GaN layers on (0001) sapphire

F. Degave, P. Ruterana, G. Nouet, J. H. Je, C. C. Kim

Year:

2002

Language:

english

File:

PDF, 310 KB

english, 2002

6

Microstructures of GaN islands on a stepped sapphire surface

Kim, C. C., Je, J. H., Ruterana, P., Degave, F., Nouet, G., Yi, M. S., Noh, D. Y., Hwu, Y.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 693 KB

english, 2002

7

Lattice Mismatch Effects between the Substrate and GMR La0.7Sr0.3MnO3 Thin Films Studied by Scanning Probe Microscopy and Raman Spectroscopy

D. Bormann, R. Desfeux, F. Degave, B. Khelifa, J. F. Hamet, J. Wolfman

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 179 KB

english, 1999

8

Nucleation of GaN on (0001) sapphire during MOCVD growth: an atomic force and high resolution electron microscopy study

Degave, F., Ruterana, P., Nouet, G., Je, J.H., Kim, C.C.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 4.92 MB

english, 2000

9

Microstructure of GaN nucleation layer during initial stage MOCVD growth

C.C. Kim, J.H. Je, M.S. Yi, D.Y. Noh, F. Degave, Pierre Ruterana

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

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